DC8550 discrete semiconductors r dc components co., ltd. technical specifications of pnp epitaxial planar transistor description designed for use in 2w output amplifier of portableradios in class b push-pull operation. pinning 1 = emitter2 = base 3 = collector to-92 .022(0.56).014(0.36) .050 (1.27) .148(3.76).132(3.36) typ .190(4.83).170(4.33) .100 (2.54) typ .050 (1.27) typ .022(0.56).014(0.36) .190(4.83).170(4.33) .500 (12.70) min 2o typ 5o typ. 2o typ 3 2 1 5o typ. dimensions in inches and (millimeters) rank b c d e range 85~160 120~200 160~300 250~500 classification of hfe2 characteristic symbol rating unit collector-base voltage vcbo -40 v collector-emitter voltage vceo -25 v emitter-base voltage vebo -6 v collector current ic -1.5 a base current ib -500 ma total power dissipation pd 1 w total power dissipation(t c=25oc) pd 2 w junction temperature tj +150 oc storage temperature tstg -55 to +150 oc absolute maximum ratings(ta=25oc) characteristic symbol min typ max unit test conditions collector-base breakdown volatge bvcbo -40 - - v ic=-100ma collector-emitter breakdown voltage bvceo -25 - - v ic=-2ma emitter-base breakdown volatge bvebo -6 - - v ie=-100ma collector cutoff current icbo - - -0.1 ma vcb =-35v emitter cutoff current iebo - - -0.1 ma veb=-6v collector-emitter saturation voltage (1) vce(sat) - - -0.5 v ic=-0.8a, ib=-80ma base-emitter saturation voltage (1) vbe(sat) - - -1.2 v ic=-0.8a, ib=-80ma base-emitter on voltage (1) vbe(on) - - -1 v ic=-10ma, vce=-1v hfe1 45 - - - ic=-5ma, vce=-1v dc current gain(1) hfe2 85 - 500 - ic=-100ma, vce=-1v hfe3 40 - - - ic=-800ma, vce=-1v transition frequency ft 100 - - mhz ic=-50ma, vce =-10v, f=100mhz electrical characteristics(ratings at 25 oc ambient temperature unless otherwise specified) (1)pulse test: pulse width 380ms, duty cycle 2%
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